F1S25N06 Просмотр технического описания (PDF) - Fairchild Semiconductor
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F1S25N06 Datasheet PDF : 8 Pages
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RFP25N06, RF1S25N06, RF1S25N06SM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
30
25
20
15
10
5
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
200
TC = 25oC
100
TJ = MAX RATED
SINGLE PULSE
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100µs
1ms
10ms
100ms
DC
100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
VGS = 20V FOR TEMPERATURES ABOVE 25oC
200
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
100
VGS = 10V
I
=
I25
1----7---5-1---5-–--0--T----C---
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1010-5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (s)
TC = 25oC
100
101
FIGURE 5. PEAK CURRENT CAPABILITY
©2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C
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