P6SMB6.8AT3 Просмотр технического описания (PDF) - ON Semiconductor
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P6SMB6.8AT3 Datasheet PDF : 7 Pages
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P6SMB6.8AT3 Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
PPK
PD
RqJL
PD
RqJA
600
W
3.0
W
40
mW/°C
25
°C/W
0.55
W
4.4
mW/°C
226
°C/W
Forward Surge Current (Note 4) @ TA = 25°C
IFSM
100
A
Operating and Storage Temperature Range
TJ, Tstg
−65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, VF = 3.5 V Max. @
IF (Note 4) = 30 A) (Note 5)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
QVBR Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive
duty cycle
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni−Directional TVS
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