P6SMB100AT3G(2007) Просмотр технического описания (PDF) - ON Semiconductor
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P6SMB100AT3G Datasheet PDF : 7 Pages
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P6SMB6.8AT3 Series
100
NONREPETITIVE
PULSE WAVEFORM
tr ≤ 10 ms
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF
SHOWN IN FIGURE 2
100
IPP.
10
PEAK VALUE − IPP
1
50
HALF
VALUE
−
IPP
2
tP
0.1
0.1 ms 1 ms
10 ms 100 ms
1 ms 10 ms
0
0
1
2
3
4
5
tP, PULSE WIDTH
t, TIME (ms)
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
160
10,000
140
P6SMB6.8AT3G
120
1000
P6SMB18AT3G
100
P6SMB51AT3G
80
100
60
40
10
P6SMB200AT3G
TJ = 25°C
20
f = 1 MHz
0
1
0
25
50
75
100
125
150
1
TA, AMBIENT TEMPERATURE (°C)
10
100
BIAS VOLTAGE (VOLTS)
1000
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance vs.
Bias Voltage
TYPICAL PROTECTION CIRCUIT
Zin
Vin
LOAD
VL
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4
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