MR2520 Просмотр технического описания (PDF) - Shindengen
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MR2520 Datasheet PDF : 7 Pages
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2-3
Equivalent Circuit and Appearance
7 Drain/Collector
1
Z/C
2
Q1
F/B
3
IC1 GND
4
Vcc
5
Vin
6 Source/Emitter
Fig.1 Equivalent Circuit
Fig.2 Appearance
3
Features
3-1
Main Switching Device - High-speed IGBT (MR2900 Series)
The unique (patented) structure of the Shindengen high-speed IGBT provides both high-speed
switching and low saturation voltage in a single device, thus also permitting its use in switching
power supplies. This newly developed high-speed IGBT is positioned between the MOSFET and
the bipolar transistor (Fig.3).
Fig.4 shows a comparison of losses in the 900V resistant switching device in the worldwide
partial resonance power supply. The loss curve is comparatively flat in relation to the wide range
of input voltage, and as such the device is optimized for use with a variety of international input
voltages.
Device
MOSFET
Symbol Drive
Vo l t a g e
ON loss
Large
Switching loss
Small
High-speed
IGBT
Vo l t a g e
IGBT
Vo l t a g e
BJT
Current
Small
Large
Fig.3 Comparison of Switching Devices
Password Vol.02-06-e MR2000 Series
P.03
All Rights Reserved Copyright (C) SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. 2002
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