MR2000 Просмотр технического описания (PDF) - Shindengen
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MR2000 Datasheet PDF : 7 Pages
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2-1
Primary Features
1 Current consumption is reduced with use of the burst mode, promoting standby compatibility
with a single converter.
2 The optimized switching device provides ideal partial resonance operation for high efficiency
and low noise.
3 The 900V resistant switching device (high-speed IGBT) simplifies design of power supplies
for worldwide input.
4 Power consumption under micro-load is extremely low (burst mode).
5 Use of a drain kick circuit eliminates the need for a start-up resistor.
6 The use of a soft drive circuit reduces noise.
7 Incorporates an over-current protection function (primary current detect, Ton limit).
8 Incorporates over-voltage protection and thermal shutdown functions.
9 A power supply circuit may be configured with the minimum of external components.
10 The use of the fully molded package is beneficial for insulation design.
2-2
Product Lineup
Model
Main switch
Peak
input
voltage
MR2520
MOSFET
500
MR2540
MR2920 High-speed
MR2940
IGBT
900
Peak
input
current
8
13
7
10
Output capacity Po [W] (reference values)
Input
voltage
range
Input
voltage
range
Input
voltage
range
AC90~132V AC90~276V AC180~276V
100
-
-
150
-
-
-
100
150
-
150
225
Table 1 MR2000 Series Product Lineup
Password Vol.02-06-e MR2000 Series
P.02
All Rights Reserved Copyright (C) SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. 2002
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