L6122 Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

L6122

100 V DMOS SWITCHES

STMicroelectronics 

L6122 - L6123

ELECTRICAL CHARACTERISTICS (Tj = 25oC, VCC = 40V, unless otherwise specified)

Symbol

VCC

ICC

IQ

BVDSS

IDSS

RDS(on) (*)

VINL, VENL

VINH, VENH

IINL, IENL

IINH, IENH

td (on)

tr

td (off )

tf

VSD (*)

VSD(on) (*)

Parameter

Supply Voltage

Supply Current

Quiescent Current

Drain Source Breakdown Voltage

Output Leakage Current

Static Drain-source on Resistance

Input Low Voltage

Input High Voltage

Input Low Current

Input High Current

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

Source Drain Diode Forward

Voltage

Source Drain Forward Voltage

Test Conditions

Min.

14

All VIN = H

VEN = Square Wave (200kHz, 50% DC)

VEN = L

ID = 1mA

100

VEN = L

VEN = L

VDS = 100V

VDS = 80V, Tj = 125°C

VCC ≥ 14V, ID = 1.5A - VEN, VIN = H

- 0.3

2

VIN, VEN = L

VIN, VEN = H

ID = 1.5A

See Test Circuit and Waveforms

ISD = 1.5A, VEN = L

ISD = 1.5A - VIN, VEN = H

Typ. Max.

48

9

23

1

1

0.7

0.8

7

- 100

10

300

100

400

100

1.5

1.2

Unit

V

mA

mA

V

mA

Ω

V

V

µA

µA

ns

ns

ns

ns

V

V

(*) Pulse test : pulse width = 300 µs, duty cycle = 2 %.

SWITCHING TIMES RESISTIVE LOAD

Figure 1 : Test Circuit.

3/9

Share Link: