IRFF210 Просмотр технического описания (PDF) - International Rectifier

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IRFF210

REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)

International Rectifier 

PD - 90424C

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFETTRANSISTORS

THRU-HOLE (TO-205AF)

Product Summary

Part Number BVDSS

IRFF210

200V

RDS(on)

1.5Ω

ID

2.25A

IRFF210

JANTX2N6784

JANTXV2N6784

REF:MIL-PRF-19500/556

200V, N-CHANNEL

The HEXFETtechnology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.

TO-39

Features:

n Repetitive Avalanche Ratings

n Dynamic dv/dt Rating

n Hermetically Sealed

n Simple Drive Requirements

n Ease of Paralleling

Absolute Maximum Ratings

ID @ VGS = 10V, TC = 25°C

ID @ VGS = 10V, TC = 100°C

IDM

PD @ TC = 25°C

Parameter

Continuous Drain Current

Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

VGS

EAS

IAR

EAR

dv/dt

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

TJ

TSTG

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

Units

2.25

1.50

A

9.0

15

W

0.12

W/°C

±20

V

48

mJ

—

A

—

mJ

5.0

V/ns

-55 to 150

oC

300 (0.063 in. (1.6mm) from case for 10s)

0.98(typical)

g

For footnotes refer to the last page

www.irf.com

1

01/22/01

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