2N2369 Просмотр технического описания (PDF) - STMicroelectronics

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2N2369

HIGH-FREQUENCY SATURATED SWITCH

STMicroelectronics 

2N2369

HIGH-FREQUENCY SATURATED SWITCH

DESCRIPTION

The 2N2369 is a silicon planar epitaxial NPN tran-

sistor in Jedec TO-18 metal case. It is designed spe-

cifically for high-speed saturated switching applica-

tions at current levels from 100 µA to 100 mA.

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCBO Collector-base Voltage (IE = 0)

VCES

Collector-emitter Voltage (V BE = 0)

VCEO

Collector-emitter Voltage (IB = 0)

VEBO

Emitter-base Voltage (IC = 0)

ICM

Collector Peak Current (t = 10 µs)

Pto t

Total Power Dissipation at T amb ≤ 25 °C

at T c as e ≤ 25 °C

at T c as e ≤ 100 °C

Ts tg, Tj Storage and Junction Temperature

Products approved to CECC 50004-022/023 available on request.

January 1989

V al ue

40

40

15

4.5

0.5

0.36

1.2

0.68

– 65 to 200

Unit

V

V

V

V

A

W

W

W

°C

1/4

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