EMIF02-MIC02F1 Просмотр технического описания (PDF) - STMicroelectronics
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EMIF02-MIC02F1 Datasheet PDF : 6 Pages
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EMIF02-MIC02F1
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter and test conditions
Tj
Maximum junction temperature
Top
Operating temperature range
Tstg
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C)
Symbol
Parameter
VBR
Breakdown voltage
IRM
Leakage current @ VRM
VRM
Stand-off voltage
VCL
Clamping voltage
Rd
Dynamic impedance
IPP
Peak pulse current
RI/O
Series resistance between Input & Output
Cline
Input capacitance per line
Symbol
VBR
IRM
RI/O
Cline
Test conditions
IR = 1 mA
VRM = 12V per line
@ 0V
Value
Unit
125
°C
-40 to + 85
°C
-55 to 150
°C
I
IPP
VCL VBR VRM
IR
IRM
V
IRM VRM VBR VCL
IR
IPP
Min.
Typ.
Max.
Unit
14
16
V
500
nA
423
470
517
Ω
16
pF
Fig. 1: S21(dB) attenuation measurement and
Aplac simulation.
- 10.00
dB
- 15.00
- 20.00
- 25.00
- 30.00
- 35.00
- 40.00
- 45.00
- 50.00
1.0M
3.0M
Measurement
Simulation
10.0M 30.0M 100.0M 300.0M
f/Hz
1.0G
3.0G
Fig. 2: Analog crosstalk measurements.
-20.00
dB
-30.00
-40.00
I2/O1
-50.00
-60.00
-70.00
-80.00
1.0M
3.0M
10.0M 30.0M 100.0M 300.0M
f/Hz
1.0G
3.0G
2/6
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