HYB3165405BJ-50 Просмотр технического описания (PDF) - Siemens AG

Номер в каталоге

Компоненты Описание

производитель

HYB3165405BJ-50

16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

Siemens AG 

HYB3164(5)405BJ/BT(L)-40/-50/-60

16M x 4-DRAM

P-SOJ-32-1 (400 mil)

P-TSOPII-32-1 (400 mil)

VCC

I/O1

I/O2

N.C.

N.C.

N.C.

N.C.

WE

R. AS

A0

A1

A2

A3

A4

A5

VCC

O

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32 VSS

31 I/O4

30 I/O3

29 N.C.

28 N.C.

27 N.C.

26 CAS

25 OE

24 A12 / N.C. *

23 A11

22 A10

21 A9

20 A8

19 A7

18 A6

17 VSS

* Pin 24 is A12 for HYB 3164405BJ/BT(L) and N.C. for HYB 3165405BJ/BT(L)

Pin Configuration

Pin Names

A0-A12

A0-A11

RAS

OE

I/O1-I/O4

CAS

WE

Vcc

Vss

Address Inputs for 8k-refresh version HYB 3164405BJ/BT(L)

Address Inputs for 4k-refresh version HYB 3165405BJ/BT(L)

Row Address Strobe

Output Enable

Data Input/Output

Column Address Strobe

Read/Write Input

Power Supply ( + 3.3V)

Ground

Semiconductor Group

3

Share Link: