M28C16-25NS6T Просмотр технического описания (PDF) - STMicroelectronics
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M28C16-25NS6T Datasheet PDF : 19 Pages
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M28C16A, M28C17A
Table 7. Power Up Timing for M28C16A and M28C17A (1)
(TA = –40 to 85°C, VCC = 4.5V to 5.5V)
Symbol
Parameter
tPUR
Time Delay to Read Operation
tPUW
Time Delay to Write Operation (once VCC ≥ VWI)
VWI
Write Inhibit Threshold
Note: 1. Sampled only, not 100% tested.
Min
Max
Unit
1
µs
10
ms
1.5
2.5
V
Table 8. Read Mode DC Characteristics for M28C16A-W
(TA = –40 to 85°C, VCC = 2.7V to 3.6V)
Symbol
Parameter
Test Condition
ILI
ILO
ICC (1)
ICC2 (1)
Input Leakage Current
Output Leakage Current
Supply Current (TTL and CMOS inputs)
Supply Current (Standby) CMOS
0V ≤ VIN ≤ VCC
0V ≤ VIN ≤ VCC
E = VIL, G = VIL , f = 5 MHz
E > VCC –0.3V
VIL
Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
VOH Output High Voltage
Note: 1. All I/O’s open circuit.
IOL = 2.1 mA
IOH = –400 µA
Min
–0.3
2
0.8 VCC
Max
10
10
15
20
0.6
VCC + 0.5
0.2 VCC
Unit
µA
µA
mA
µA
V
V
V
V
Table 9. Power Up Timing for M28C16A-W (1)
(TA = –40 to 85°C, VCC = 2.7V to 3.6V)
Symbol
Parameter
tPUR
tPUW
Time Delay to Read Operation
Time Delay to Write Operation (once VCC ≥ VWI)
VWI
Write Inhibit Threshold
Note: 1. Sampled only, not 100% tested.
Min
Max
Unit
1
µs
10
ms
1.5
2.5
V
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