M28C16-25NS6T Просмотр технического описания (PDF) - STMicroelectronics
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M28C16-25NS6T Datasheet PDF : 19 Pages
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M28C16A
M28C17A
16 Kbit (2Kb x8) Parallel EEPROM
FAST ACCESS TIME:
– 150ns at 5V
– 250ns at 3V
SINGLE SUPPLY VOLTAGE:
– 5V ± 10% for M28C16A and M28C17A
– 2.7V to 3.6V for M28C16-xxW
LOW POWER CONSUMPTION
FAST WRITE CYCLE
– 32 Bytes Page Write Operation
– Byte or Page Write Cycle: 5ms
ENHANCED END OF WRITE DETECTION
– Ready/Busy Open Drain Output
– Data Polling
– Toggle Bit
PAGE LOAD TIMER STATUS BIT
HIGH RELIABILITY SINGLE POLYSILICON,
CMOS TECHNOLOGY
– Endurance >100,000 Erase/Write Cycles
– Data Retention >40 Years
JEDEC APPROVED BYTEWIDE PIN OUT
28
1
PDIP28 (BS)
PLCC32 (KA)
28
1
SO28 (MS)
300 mils
TSOP28 (NS)
8 x13.4mm
Figure 1. Logic Diagram
DESCRIPTION
The M28C16A and M28C17Aare 2K x8 low power
Parallel EEPROM fabricatedwith STMicroelectron-
ics proprietarysingle polysilicon CMOS technology.
The device offers fast access time with low power
dissipation and requires a 5V or 3V power supply.
VCC
11
A0-A10
8
DQ0-DQ7
Table 1. Signal Names
A0-A10
Address Input
DQ0-DQ7 Data Input / Output
W
Write Enable
E
Chip Enable
G
Output Enable
RB
Ready / Busy
VCC
Supply Voltage
VSS
Ground
W
M28C16A
M28C17A
E
RB
G
VSS
AI02109
August 1998
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