RF2131PCBA Просмотр технического описания (PDF) - RF Micro Devices

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RF2131PCBA

HIGH EFFICIENCY AMPS/ETACS AMPLIFIER

RF Micro Devices 

RF2131

Application Schematic 2

Optimized for Power and Efficiency over 4.0V to 4.8V

VCC VPC

VCC

10 nF

100 nF 100 pF

33 pF

2

10 nF

RF IN

VCC

1

100 nF 2

3

4

5

6

100 pF

7

8

100 pF

BIAS

16

10 nH

15

14

4.7 pF

13

2.7 nH 0.140"

100 pF

RF OUT

12

6.2 pF

11

10

4.7 pF 10 nH

9

33 pF

This application circuit differs from Application schematic 1 only slightly in the output tuning. The output shunt capacitor

has been moved 0.060” closer to the device, and has increased from 5.6pF to 6.2pF. This retuning allows over

+30.8dBm of output power to be achieved down to 4.0V, however a couple of percent points of efficiency are sacrificed.

This implementation is recommended for some additional margin on output power.

Rev B4 010417

2-105

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