RF2131PCBA Просмотр технического описания (PDF) - RF Micro Devices
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RF2131PCBA Datasheet PDF : 10 Pages
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Typical Applications
• AMPS/ETACS Cellular Handsets
• CDPD Portable Data Cards
• 900MHz ISM Band Equipment
RF2131
HIGH EFFICIENCY AMPS/ETACS AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
2
Product Description
The RF2131 is a high-power, high-efficiency amplifier IC.
The device is manufactured on an advanced Gallium Ars-
enide Heterojunction Bipolar Transistor (HBT) process,
and has been designed for use as the final RF amplifier in
AMPS and ETACS handheld equipment, spread spec-
trum systems, CDPD, and other applications in the
800MHz to 950MHz band. On-board power control pro-
vides over 30dB of control range with an analog voltage
input, and provides power down with a logic "low" for
standby operation. Although it is intended for class C
operation, linear class AB operation can be achieved by
raising the bias level. The device is self-contained with
50Ω input and the output can be easily matched to obtain
optimum power and efficiency characteristics.
0.158
0.150
0.392
0.386
0.021
0.014
0.069
0.064
-A-
0.009
0.004
0.050
8° MAX
0° MIN
0.244
0.230
0.035
0.016
0.010
0.008
0.060
0.054
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
PC 1
NC 2
VCC2 3
GND 4
GND 5
GND1 6
RF IN 7
VCC1 8
BIAS
16 NC
15 RF OUT
14 RF OUT
13 GND
12 GND
11 RF OUT
10 RF OUT
9 NC
Package Style: Standard Batwing
Features
• Single 4.0V to 7.0V Supply
• 1.2W Output Power
• 25dB Gain With Analog Gain Control
• 64% Efficiency
• Digitally Controlled Power Down Mode
• 800MHz to 950MHz Operation
Ordering Information
RF2131
High Efficiency AMPS/ETACS Amplifier
RF2131 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B4 010417
2-99
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