CGY2105ATS Просмотр технического описания (PDF) - Philips Electronics
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CGY2105ATS Datasheet PDF : 16 Pages
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Philips Semiconductors
High dynamic range dual LNA MMIC
Preliminary specification
CGY2105ATS
CHARACTERISTICS
Tamb = 25 °C; measured and guaranteed only for the application shown in Chapter “Application and test information”;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supplies
Isupply
Ineg
positive supply current (for each LNA)
negative supply current (for each LNA)
Vsupply = 5.0 V;
Vneg = −5.0 V
Vsupply = 5.0 V;
Vneg = −5.0 V
42
58
−
0.3
Amplifiers: Vsupply = 5.0 V; Vneg = −5.0 V; Z0 = 50 Ω; both LNAs biased; duty cycle 100%
fi
G
∆G(T)
NF
input frequency
gain
gain variation with temperature
noise figure
fi = 1710 MHz
fi = 1710 to 1910 MHz
−40 °C < Tamb < +85 °C
1 710
16
14.8
−
−
−
16.9
16.3
±0.45
0.55
∆NF(T)
IP3i
∆IP3i(T)
noise figure variation with temperature −40 °C < Tamb < +85 °C −
input third-order intercept point
∆f = ±0.5 MHz
11
input third-order intercept point
variation with temperature
−40 °C < Tamb < +85 °C −
±0.25
13.5
±0.45
ISOr
ISOi
s11
s22
reverse isolation
isolation between inputs
input reflection coefficient
output reflection coefficient
50 Ω source
50 Ω load
18
20
21
23
−
−8.5
−
−22
72
0.4
1 910
17.8
17.8
−
0.8
−
−
−
−
−
−
−
mA
mA
MHz
dB
dB
dB
dB
dB
dBm
dB
dB
dB
dB
dB
1999 Dec 23
4
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