FDH3595 Просмотр технического описания (PDF) - Fairchild Semiconductor

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FDH3595

High Conductance Low Leakage Diode

Fairchild Semiconductor 

High Conductance Low Leakage Diode

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

BV

IR

Parameter

Breakdown Voltage

Reverse Voltage Leakage Current

VF

Forward Voltage

CT

Diode Capacitance

Test Conditions

IR = 100 µA

VR = 125 V

VR = 30 V, TA = 125°C

VR = 125 V, TA = 125°C

VR = 125 V, TA = 150°C

IF = 1.0 mA

IF = 5.0 mA

IF = 10 mA

IF = 50 mA

IF = 100 mA

IF = 200 mA

VR = 0, f = 1.0 MHz

Min

150

520

600

650

750

790

0.83

Max

1.0

300

500

3.0

680

760

800

890

920

1.0

8.0

Units

V

nA

nA

nA

µA

mV

mV

mV

mV

mV

V

pF

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