IRF440 Просмотр технического описания (PDF) - International Rectifier

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IRF440

REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE)

International Rectifier 

PD - 90372A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFETTRANSISTORS

THRU-HOLE (TO-204AA/AE)

IRF440

500V, N-CHANNEL

Product Summary

Part Number BVDSS RDS(on) ID

IRF440

500V 0.85Ω 8.0A

The HEXFETtechnology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of paralleling and temperature

stability of the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

TO-3

Features:

n Repetitive Avalanche Ratings

n Dynamic dv/dt Rating

n Hermetically Sealed

n Simple Drive Requirements

n Ease of Paralleling

Absolute Maximum Ratings

ID @ VGS =0V, TC = 25°C

ID @ VGS = 0V, TC = 100°C

IDM

PD @ TC = 25°C

Parameter

Continuous Drain Current

Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Units

8.0

5.0

A

32

125

W

1.0

W/°C

VGS

EAS

IAR

EAR

dv/dt

TJ

TSTG

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➁

700

Avalanche Current ➀

8.0

Repetitive Avalanche Energy ➀

-

Peak Diode Recovery dv/dt ➂

3.5

Operating Junction

-55 to 150

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from case for 10s)

Weight

11.5(typical)

V

mJ

A

mJ

V/ns

oC

g

For footnotes refer to the last page

www.irf.com

1

4/20/01

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