IRFR1111 Просмотр технического описания (PDF) - International Rectifier

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производитель

IRFR1111

HEXFET® Power MOSFET

International Rectifier 

1000

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

1

0.1

4.5V

0.01

0.1

20µs PULSE WIDTH

TJ= 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

IRFR/U3303

1000

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

20µs PULSE WIDTH

4.5V TJ= 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ = 150 °C

10

TJ = 25° C

1

0.1

4

V DS =1255VV

20µs PULSE WIDTH

5

6

7

8

9

10

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

2.0

ID = 30A

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

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