IRF3415STRR Просмотр технического описания (PDF) - International Rectifier

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производитель

IRF3415STRR

HEXFET® Power MOSFET

International Rectifier 

IRF3415S/L

1000

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.5V

BOTTOM 4.55V.0V

100

1000

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.5V

BOTTOM 45.5.0VV

100

4.5V

10

1

20us PULSE WIDTH

TJ = 25 oC

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

4.5V

10

1

20us PULSE WIDTH

TJ = 175 oC

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

TJ = 25 °C

100

TJ = 175 ° C

V DS= 50V

20µs PULSE WIDTH

10

4

5

6

7

8

9

10

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

3.0 ID = 37A

2.5

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ, Junction Temperature ( oC)

Fig 4. Normalized On-Resistance

Vs. Temperature

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