IRF5804 Просмотр технического описания (PDF) - International Rectifier

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Компоненты Описание

производитель

IRF5804

HEXFET® Power MOSFET

International Rectifier 

IRF5804

FOR REVIEW ONLY

0.40

0.35

0.30

0.25

0.20

ID = -2.5A

0.15

0.10

4.0

5.0

6.0

7.0

8.0

9.0 10.0

-VGS, Gate -to -Source Voltage (V)

Fig 12. Typical On-Resistance Vs.

Gate Voltage

0.40

0.35

0.30

VGS = -4.5V

0.25

0.20

0.15

VGS = -10V

0.10

1

2

3

4

5

6

7

8

9 10

-ID , Drain Current (A)

Fig 13. Typical On-Resistance Vs.

Drain Current

QGS

VG

QG

QGD

Charge

Fig 14a. Basic Gate Charge Waveform

6

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

-

+VDS

VGS

-3mA

IG

ID

Current Sampling Resistors

Fig 14b. Gate Charge Test Circuit

www.irf.com

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