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ZXRE1004 Просмотр технического описания (PDF) - Zetex => Diodes

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ZXRE1004 Datasheet PDF : 4 Pages
1 2 3 4
ZXRE1004
ABSOLUTE MAXIMUM RATINGS
Reverse Current
Forward Current
Operating temperature.
Storage temperature.
30mA
10mA
-40 to 85°C
-55 to 125°C
Power Dissipation (Tamb=25°C)
SOT23
330mW
SO8
625mW
E-Line
500mW
ELECTRICAL CHARACTERISTICS
TEST CONDITIONS (Unless otherwise stated) Tamb=25°C
SYMBOL PARAMETER
CONDITIONS
LIMITS
MIN TYP
VR
Reverse Breakdown Voltage IR=100A
1.214 1.22
1.208 1.22
1.196 1.22
1.183 1.22
IMIN
Minimum Knee Current
4
IR
TC
VR
IR
ZR
EN
Recommended Operating
Current Range
Average Reverse Breakdown
Voltage Temperature
Coefficient
Reverse Breakdown Voltage
change with Current
0.008
IR(min) to IR(max)
20
IR=8A to 1mA
IR=1mA to 20mA
Reverse Dynamic Impedance IR =1mA
0.2
f =100Hz
IAC=0.1 IR
Wideband Noise Voltage
IR=8A to 100A
60
f=10Hz to 10kHz
TOL. % UNITS
MAX
1.226 0.5 V
1.232 1
1.244 2
1.257 3
8
A
20
mA
75
ppm/°C
1
mV
10
mV
0.6

V(rms)

TC

VR
V max  R  min  x 1000000
  VR x Tmax  Tmin 
Note: VR(max) - VR(min) is the maximum
deviation in reference voltage
measured over the full operating
temperature range.
Note: 0.5% SOT23 only
10
8
6
-40°C
25°C
4
85°C
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Reverse Voltage (V)
Reverse Characteristics
ISSUE 2 - JUNE 1999
2

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