ZXMN2A01FTA Просмотр технического описания (PDF) - TY Semiconductor

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ZXMN2A01FTA

20V N-CHANNEL ENHANCEMENT MODE MOSFET

TY Semiconductor 

Product specification

ZXMN2A01F

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (1)(3)

gfs

DYNAMIC (3)

20

V ID=250µA, VGS=0V

1

µA VDS=20V, VGS=0V

100 nA VGS=Ϯ12V, VDS=0V

0.7

V

I=

D

250µA,

VDS=

VGS

0.12 Ω VGS=4.5V, ID=4A

0.225 Ω VGS=2.5V, ID=1.5A

6.1

S VDS=10V,ID=4A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

303

pF

VDS=15 V, VGS=0V,

59

pF f=1MHz

30

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

2.49

5.21

7.47

4.62

3.0

0.8

1.0

ns

ns VDD =10V, ID=4A

ns RG=6.0Ω, VGS=5V

ns

nC

VDS=10V,VGS=4.5V,

nC ID=4A

nC

Diode Forward Voltage (1)

VSD

Reverse Recovery Time (3)

trr

Reverse Recovery Charge (3)

Qrr

0.85 0.95

23

5.65

V TJ=25°C, IS=3.2A,

VGS=0V

ns TJ=25°C, IF= 4A,

di/dt= 100A/µs

nC

NOTES:

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

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