ZXMN2A01FTA Просмотр технического описания (PDF) - TY Semiconductor

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производитель

ZXMN2A01FTA

20V N-CHANNEL ENHANCEMENT MODE MOSFET

TY Semiconductor 

Product specification

ZXMN2A01F

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current VGS=10V; TA=25°C (b)

VGS=10V; TA=70°C (b)

VGS=10V; TA=25°C (a)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode) (b)

Pulsed Source Current (Body Diode) (c)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Power Dissipation at TA=25°C (b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj:Tstg

LIMIT

20

12

2.2

1.7

1.9

8

1.29

8

625

5

806

6.4

-55 to +150

UNIT

V

V

A

A

A

A

mW

mW/°C

mW

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

Junction to Ambient (a)

Junction to Ambient (b)

SYMBOL

RθJA

RθJA

VALUE

200

155

UNIT

°C/W

°C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tՅ5 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.

http://www.twtysemi.com

sales@twtysemi.com

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