ZXM61P02FTA Просмотр технического описания (PDF) - Zetex => Diodes

Номер в каталоге

Компоненты Описание

производитель

ZXM61P02FTA

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXM61P02F

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS -20

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th) -0.7

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (3)

DYNAMIC (3)

gfs

0.56

V

ID=-250µA, VGS=0V

-1

µA VDS=-20V, VGS=0V

±100 nA VGS=± 12V, VDS=0V

V

ID=-250µA, VDS= VGS

0.6

Ω

VGS=-4.5V, ID=-0.61A

0.9

Ω

VGS=-2.7V, ID=-0.31A

S

V D S= - 10 V , I D=- 0 . 3 1A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

150

pF

VDS=-15 V, VGS=0V,

70

pF f=1MHz

30

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

2.9

6.7

11.2

10.1

3.5

0.5

1.5

ns

ns VDD =-10V, ID=-0.93A

ns

RG=6.2Ω, RD=11Ω

(Refer to test circuit)

ns

nC

V D S= - 16 V , V GS= - 4. 5 V ,

nC ID=-0.61A

(Refer to test circuit)

nC

Diode Forward Voltage (1)

VSD

-0.95 V

Tj=25°C, IS=-0.61A,

V GS= 0 V

Reverse Recovery Time (3)

trr

Reverse Recovery Charge(3)

Qrr

14.9

5.6

ns Tj=25°C, IF=-0.61A,

di/dt= 100A/µs

nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - JULY 1999

76

Share Link: