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ZPD75 Просмотр технического описания (PDF) - General Semiconductor

Номер в каталоге
Компоненты Описание
производитель
ZPD75
GE
General Semiconductor GE
ZPD75 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ZPD1 THRU ZPD75
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Type
ZPD1(3)
ZPD2.7
ZPD3
ZPD3.3
ZPD3.6
ZPD3.9
ZPD4.3
ZPD4.7
ZPD5.1
ZPD5.6
ZPD6.2
ZPD6.8
ZPD7.5
ZPD8.2
ZPD9.1
ZPD10
ZPD11
ZPD12
ZPD13
ZPD15
ZPD16
ZPD18
ZPD20
ZPD22
ZPD24
ZPD27
ZPD30
ZPD33
ZPD36
ZPD39
ZPD43
ZPD47
ZPD51
ZPD56
ZPD62
ZPD68
ZPD75
Zener Voltage(1)
at
IZ = 5 mA
VZ (V)
0.7 ... 0.8
2.5 ... 2.9
2.8 ... 3.2
3.1 ... 3.5
3.4 ... 3.8
3.7 ... 4.1
4.0 ... 4.6
4.4 ... 5.0
4.8 ... 5.4
5.2 ... 6.0
5.8 ... 6.6
6.4 ... 7.2
7.0 ... 7.9
7.7 ... 8.7
8.5 ... 9.6
9.4 ... 10.6
10.4 ... 11.6
11.4 ... 12.7
12.4 ... 14.1
13.8 ... 15.6
15.3 ... 17.1
16.8 ... 19.1
18.8 ... 21.2
20.8 ... 23.3
22.8 ... 25.6
25.1 ... 28.9
28 ... 32
31 ... 35
34 ... 38
37 ... 41
40 ... 46
44 ... 50
48 ... 54
52.0 … 60.0(4)
58.0 … 66.0(4)
64.0 … 72.0(4)
70.0 … 79.0(4)
Dynamic Resistance
at
IZ = 5 mA
f = 1 kHz
rzj ()
6.5 (< 8)
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 135(4)
< 150(4)
< 200(4)
< 250(4)
at
IZ = 1 mA
f = 1 kHz
rzj ()
< 50
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
< 1000(5)
< 1000(5)
< 1000(5)
< 1500(5)
Temp. Coeff.
of Zener Voltage
at
IZ = 5 mA
αvz (10–4/K)
–26 ... –23
–9 ... –4
–9 ... –3
–8 ... –3
–8 ... –3
–7 ... –3
–6 ... –1
–5 ... +2
–3 ... +4
–2 ... +6
–1 ... +7
+2 ... +7
+3 ... +7
+4 ... +7
+5 ... +8
+5 ... +8
+5 ... +9
+6 ... +9
+7 ... +9
+7 ... +9
+8 ... +9.5
+8 ... +9.5
+8 ... +10
+8 ... +10
+8 ... +10
+8 ... +10
+8 ... +10
+8 ... +10
+8 ... +10
+10 ... +12
+10 ... +12
+10 ... +12
+10 ... +12
typ. +10(4)
typ. +10(4)
typ. +10(4)
typ. +10(4)
Reverse
Voltage
at
IR = 100 nA
VR (V)
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
Admissible
Zener current(2)
at
Tamb = 45°C
IZ (mA)
280
135
117
109
101
92
85
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
at
Tamb = 25°C
IZ (mA)
340
160
140
130
120
110
100
90
80
70
64
58
53
47
43
40
36
32
29
27
24
21
20
18
16
14
13
12
11
10
9.2
8.5
7.8
NOTES:
(1) Tested with pulses tp = 5 ms
(2) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
(3) The ZPD1 is a silicon diode operated in forward direction. Hence, the subscript of all parameters should be “F” instead of “Z”.
Connect the cathode terminal to the negative pole
(4) at IZ = 2.5 mA
(5) at IZ = 0.5 mA

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