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X0402MF Просмотр технического описания (PDF) - Inchange Semiconductor

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Компоненты Описание
производитель
X0402MF
Iscsemi
Inchange Semiconductor Iscsemi
X0402MF Datasheet PDF : 1 Pages
1
Thyristors
X0402MF
INCHANGE
‹ Features
·With TO-202 package
KAG
·1cathode 2 anode 3 gate
·Highly sensitive triggering levels
·For capacitive discharge ignitions,motor control
In kitchen aids ,overvoltage crowbar protection
In low power supplies applications
‹ QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN
VDRM Repetitive peak off-state voltage
600
VRRM Repetitive peak reverse voltage
600
IT(AV) Average on-state current
4
ITSM Non-repetitive peak on-state current
20
Tj
Junction temperature
110
Tstg
Storage temperature
‹ LIMITING VALUES
ELECTRICAL CHARACTERISTICS (TJ=25,unless otherwise specified)
-40 ~150
SYMBOL
PARAMETER
CONDITIONS
MIN MAX
UNIT
V
V
A
A
UNIT
VDRM Repetitive peak off-state voltage ID=0.1mA
600
V
VRRM Repetitive peak reverse voltage ID=0.1mA
600
V
IDRM Repetitive peak off-state current VDRM=600V
5
μA
IRRM Repetitive peak reverse current VRRM=600V
5
μA
VTM
On-state voltage
IT=4A
1.7
V
IH
Holding current
IT=0.05A
5
mA
IGT
Gate trigger current
VD=12V; RL=140Ω
5
200 μA
VGT
Gate trigger voltage
VD=12V; RL=140Ω
0.8
V
VGD Gate non-trigger voltage
VDRM=400V, RGR=1kΩ;Tj=1100.1
V

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