WFU4N60 Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd

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WFU4N60

Silicon N-Channel MOSFET

Shenzhen Winsemi Microelectronics Co., Ltd 

WFU4N60 Product Description

Silicon N-Channel MOSFET

1.15

3.0

1.10

2.5

1.05

1.00

0.95

0.90

Note:

1.VG S =0V

2 . ID=250uA

-75 -50 -25 0

25

50

75

100 125 150

T j[℃ ]

Fig.7 Breakdown Voltage Variation

vs. Temperature

2.0

1.5

1.0

0.5

0.0

-75 -50 -25 0

Note:

1.VG S =0V

2. ID=2.0A

25

5 0 7 5 100 125 150

T j[℃ ]

Fig.8 On-Resistance Variation

vs. Temperature

101

Operation in This Area

is L im ite d b y R DS(on)

10 0

100us

1ms

10ms

100ms

DC

1 0 -1

1 0 -2

10 0

N o te s:

1 .Tc= 2 5 °C

2 . T J=150°C

3.Single pulse

10 1

102

VD S [V ]

10 3

Fig.9 Maximum Safe Operation Area

5

4

3

2

1

0

25

50

75

100

125

150

Tc C a s e Te mp e ra tu re [℃ ]

Fig.10 Maximum Drain Current

vs Case temperature

100

1 0 -1

1 0 -2

1 0 -5

Single pulse

1 0 -4

1 0 -3

1 0 -2

*N ote：

1.ZθJ C (t)=2.5°C/W Max.

2.Duty Factor,D=t1/t2

3.TJM-TC=PDM*ZθJ C (t)

PD M

1 0 -1

t1

t2

100

101

Fig.11 Transient thermal Response Curve

WINSEMI MICROELECTRONICS

WINSEMI MICROELECTRONICS

WINSEMI MICROELECTRONICS

www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299

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WINSEMI MICROELECTRONICS

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