WFU4N60 Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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WFU4N60 Datasheet PDF : 8 Pages
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WFU4N60 Product Description
Silicon N-Channel MOSFET
VGS
10
To p
15V
10V
8V
7V
6.5V
6V
5.5V
Bottom 5V
1
Note:
1.250us pulse test
2. Tc=25℃
1
10
VD S [V]
Fig.1 On Region Characteristics
2 .4
2 .2
2 .0
VG S =10V
1 .8
1 .6
1 .4
VG S =20V
Note:T j =25 ℃
1 .2
0
1
2
3
4
5
6
ID[A]
Fig.3 On-Resistance Variation vs Drain
Current and Gate Voltage
10
150℃
1
0 .1
2
10
25℃
Note:
1.250us pulse test
2.VD S =40V
4
6
8
10
V G S [V ]
Fig.2 Transfer Characteristics
1
150℃
25℃
Note:
1.250us pulse test
2.VG S =0V
0 .1
0 .4
0.5 0.6
0.7 0.8 0.9 1.0 1.1
1.2 1.3
VS D [V]
Fig.4 Body Diode Forward Voltage Variation
vs. Source Current and Temperature
8 .0 X 10 2
6 .0 X 10 2
12
Cis s =Cgs +Cgd(Cds =s hort ed)
Cos s =Cds +Cgd
Crs s =Cgd
10
8
VD S =480V
V D S=120V
VD S =300V
4 .0 X 10 2
6
4
2 .0 X 10 2
2
0 .0 1 0 -1
100
101
VD S [V]
Fig.5 Capacitance Characteristics
0
0
2
4
6
8
10
12
14
Qg Toltal Gate Charge[nC]
Fig.6 Gate Charge Characteristics
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
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