WFU4N60 Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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WFU4N60 Datasheet PDF : 8 Pages
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WFU4N60 Product Description
Silicon N-Channel MOSFET
Features
� 4.0A,600V,RDS(on)(Max2.3Ω)@VGS=10V
� Ultra-low Gate charge(Typical15nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
TJ
Junction Temperature
Tstg
Storage Temperature
TL
Channel Temperature
*Drain current limited by maximum junction temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
600
4.0
2.6*
16
±30
240
10
4.5
83
0.78
-55~150
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min
Typ
Max
-
-
1.5
℃/W
-
-
83
℃/W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEMI MICROELECTRONICS
WT-F072-Rev.A0 Jul 2014
WINSEMI MICROELECTRONICS
0714
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