WFF8N65B Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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WFF8N65B Datasheet PDF : 7 Pages
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Electrical Characteristics(Tc=25℃)
WFF8N65B
Characteristics
Symbol Test Condition Min Type Max Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±100 nA
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
VDS=650V,VGS=0V,Tc=25℃
-
IDSS
VDS=500V,Tc=125℃
-
-
10
µA
-
100 µA
Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V
650
-
-
V
Breakdown Voltage Temperature
Coefficient
∆BVDSS/∆
TJ
ID=250 µA, referenced to
25℃
-
0.65
-
V/℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON) VGS=10V,ID=3.75A
-
1.1
1.3
Ω
Forward Transconductance
gfs
VDS=40V,ID=3.75A
-
6.2
-
S
Input capacitance
Ciss
VDS=25V,
-
1120 1350
Reverse transfer capacitance
Output capacitance
Crss
VGS=0V,
Coss
f=1MHz
-
23
30
pF
-
115
150
Switching
time
Turn-On Rise time
Turn-On time
Turn-Off Fall time
Turn-Off time
tr
Td(on)
tf
Td(off)
VDD=300V,
ID=7.5A
RG=25Ω
(Note4,5)
-
80
170
-
30
70
ns
-
60
110
-
125
260
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
VDD=480V,
Qg
VGS=10V,
Qgs
ID=7.5A
Qgd
(Note4,5)
-
25
35
nC
-
6
-
-
10
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
-
-
-
7.5
A
Pulse drain reverse current
IDRP
-
-
-
30
A
Forward voltage(diode)
VDSF
IDR=7.5A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=7.5A,VGS=0V,
-
315
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
2.6
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=19.5mH IAS=7.5A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤7.5.A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
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