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WFF8N65B

Silicon N-Channel MOSFET

Shenzhen Winsemi Microelectronics Co., Ltd 

Features

� 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V

� Ultra-low Gate charge(Typical 25nC)

� Fast Switching Capability

� 100%Avalanche Tested

� Isolation Voltage (VISO=4000V AC)

� Maximum Junction Temperature Range(150℃)

WFF8N65B

Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced

planar stripe,VDMOS technology.this latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics .This devices is specially well

suited for half bridge and full bridge resonant topology line a

electronic lamp ballast, high efficiency switched mode power

supplies, active power factor correction.

Absolute Maximum Ratings

Symbol

Parameter

VDSS

ID

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

IDM

Drain Current Pulsed

VGS

Gate to Source Voltage

EAS

Single Pulsed Avalanche Energy

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv /dt

Total Power Dissipation(@Tc=25℃)

PD

Derating Factor above 25℃

TJ,Tstg

Junction and Storage Temperature

TL

Channel Temperature

*Drain current limited by junction temperature

(Note1)

(Note2)

(Note1)

(Note3)

Value

650

7.5*

4.3*

30*

±30

590

14

4.5

48

0.38

-55~150

300

Units

V

A

A

A

V

mJ

mJ

V/ ns

W

W/℃

℃

℃

Thermal Characteristics

Symbol

Parameter

RQJC

RQJA

Thermal Resistance , Junction -to -Case

Thermal Resistance , Junction-to -Ambient

Value

Units

Min Typ Max

-

-

2.6

℃/W

-

-

62.5

℃/W

Rev.A Nov.2011

Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

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