W005M Просмотр технического описания (PDF) - Yea Shin Technology Co., Ltd
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W005M Datasheet PDF : 2 Pages
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DATA SHEET
SEMICONDUCTOR
W005M THRU W10M
SINGLE-PHASE SILICON BRIDGE
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.5 Amperes
WOM
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded epoxy
technique results in inexpensive product
The plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity: As marked on Body
Weight : 0.05 ounces, 1.42grams
Mounting position : Any
A
D
B
C
E
+
F
F
WOG
DIM. MIN. MAX.
A
8.90 9.30
B
25.4
C
27.9
D
5.10 5.60
E
0.70 0.80
F
4.60 5.60
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL W005M W01M
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
Maximum RMS Voltage
VRMS
35
70
Maximum DC Blocking Voltage
VDC
50
100
Maximum Average Forward
Rectified Current
@TA=25 C
I(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
superimposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
I2t Rating for fusing (t < 8.3ms)
Typical Junction Capacitance
per element (Note 1)
Typical Thermal Resistance (Note 2)
VF
IR
I2t
CJ
RθJA
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient
W02M
200
140
200
W04M
400
280
400
W06M
600
420
600
1.5
50
1.0
5.0
500
10.4
20
36
-55 to +150
-55 to +150
W08M
800
560
800
W10M UNIT
1000 V
700 V
1000 V
A
A
V
uA
A2S
pF
C/W
C
C
http://www.yeashin.com
1
REV.02 20130305
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