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UPG2009TB

L, S-BAND HIGH POWER SPDT SWITCH

California Eastern Laboratories. 

NEC's

L, S-Band HIGH POWER

SPDT Switch

UPG2009TB

FEATURES

• Low insertion loss:

0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz

0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz

• High isolation:

28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz

• power HANDLING:

Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz

• BIDIRECTIONAL, SYMMETRICAL

• 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

DESCRIPTION

NEC's UPG2009TB is a L, S-band SPDT (Single

Pole Double Throw) GaAs FET switch for digital cellu-

lar or cordless telephone application. The device can

operate from 500 MHz to 2.5 GHz, with low insertion

loss and high isolation.

APPLICATIONS

• L-band digital cellular or cordless telephone

• BluetoothTM , W-LAN and WLL

• Short Range Wireless

ORDERING INFORMATION

Part Number

Package

UPG2009TB-E3-A 6-pin super minimold

Marking

Supplying Form

G2U

• Embossed tape 8 mm wide

• Pin 1, 2, 3 face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: UPG2009TB-A

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

California Eastern Laboratories

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