UM4301 Просмотр технического описания (PDF) - Unitpower Technology Limited
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UM4301 Datasheet PDF : 7 Pages
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UM4301
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
△VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25℃ , ID=1mA
VGS=10V , ID=6A
VGS=4.5V , ID=4A
VGS=VDS , ID =250uA
VDS=32V , VGS=0V , TJ=25℃
VDS=32V , VGS=0V , TJ=55℃
VGS=±20V , VDS=0V
VDS=5V , ID=12A
VDS=0V , VGS=0V , f=1MHz
VDS=20V , VGS=4.5V , ID=6A
VDD=20V , VGS=10V , RG=3.3Ω
ID=1A
VDS=15V , VGS=0V , f=1MHz
Min.
40
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1.0
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Typ.
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0.034
22
28
1.5
-4.56
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8
2.6
5.5
1.25
2.5
8.9
2.2
41
2.7
593
76
56
Max.
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26
35
2.5
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1
5
±100
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5.2
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Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=10A
Min. Typ. Max. Unit
9
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mJ
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
Min. Typ. Max. Unit
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7
A
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14
A
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1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A
4.The power dissipation is limited by 175℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
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