UESDXXDT5G Просмотр технического описания (PDF) - ON Semiconductor
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UESDXXDT5G Datasheet PDF : 4 Pages
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mESD3.3DT5G SERIES
TYPICAL CHARACTERISTICS
7.4
7.3
7.2
7.1
7.0
6.9
6.8
6.7
6.6
6.5
6.4
6.3
− 55
mESDxxDT5G
+ 25
TEMPERATURE (°C)
+ 150
Figure 1. Typical Breakdown Voltage
versus Temperature
45
40
35
30
mESDxxDT5G
25
20
15
10
5
0
0
1
2
3
4
5
BIAS VOLTAGE (V)
Figure 3. Typical Capacitance versus Bias Voltage
20
18
16
14
12
10
8
6
4
2
0
−55
300
mESDxxDT5G
+ 25
TEMPERATURE (°C)
Figure 2. Typical Leakage Current
versus Temperature
+ 150
250
200
150
100
FR−5 BOARD
50
0
0
25
50 75 100 125 150 175
TEMPERATURE (°C)
Figure 4. Steady State Power Derating Curve
Figure 5. Positive 8 kV contact per IEC 6100−4−2
− mESD5.0DT5G
Figure 6. Negative 8 kV contact per IEC 61000−4−2
− mESD5.0DT5G
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