TM200RZ-M Просмотр технического описания (PDF) - Mitsumi

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TM200RZ-M

HIGH POWER GENERAL USE INSULATED TYPE

Mitsumi 

MITSUBISHI THYRISTOR MODULES

TM200RZ/EZ/GZ-M,-H,-24,-2H

HIGH POWER GENERAL USE

INSULATED TYPE

MAXIMUM RATINGS

Item

Thyristor

Diode

VRRM

VRSM

VR (DC)

VDRM

VDSM

VD (DC)

IT (RMS)

IT (AV)

ITSM

I2t

di/dt

IF (RMS)

IF (AV)

IFSM

—

—

—

—

Item

Thyristor

Diode

PGM

PG (AV)

VFGM

IFGM

Tj

Tstg

—

—

—

—

ELECTRICAL CHARACTERISTICS

Item

Thyristor

Diode

VTM

IRRM

IDRM

dv/dt

VGT

VFM

—

—

—

VGD

—

IGT

Rth (j-c)

Rth (c-f)

—

PERFORMANCE CURVES

MAXIMUM FORWARD CHARACTERISTIC

10 4

7 Tj=125°C

5

3

2

10 3

7

5

3

2

10 2

7

5

3

2

10 1

0.5

1.0

1.5

2.0

2.5

FORWARD VOLTAGE (V)

GATE CHARACTERISTICS

4

3

2

VFGM=10V

10 1

7 VGT=3.0V

5

PGM=10W

3

2 Tj=25°C

10 0

7

5

IGT=

100mA

3

2

PG(AV)=

3.0W

10 –1

7

5

410 1 2 3

VGD=0.25V

5 7 10 2 2 3

IFGM=4.0A

5 7 10 3 2 3 5 7 10 4

GATE CURRENT (mA)

RATED SURGE (NON-REPETITIVE)

CURRENT

4000

3500

3000

2500

2000

1500

1000

500

0

1 2 3 5 7 10 20 30 50 70100

CONDUCTION TIME (CYCLE AT 60Hz)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE (JUNCTION TO CASE)

10 0 2 3 4 5 7 10 1 2 3

0.25

0.20

0.15

0.10

0.05

0

10 –3 2 3 5 710 –2 2 3 5 7 10 –12 3 5 7 10 0

TIME (s)

Feb.1999

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