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Компоненты Описание
TLP321 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
TLP321
Photocoupler GaAs Ired & Photo−Transistor
Toshiba
TLP321 Datasheet PDF : 9 Pages
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Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F
I
C
T
opr
TLP321,TLP321-2,TLP321-4
Min. Typ. Max. Unit
―
12
―
16
―
1
-
25
―
48
V
20
mA
10
mA
85
°C
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Collector
-
emitter
breakdown voltage
Emitter
-
collector
breakdown voltage
Collector dark current
Capacitance
(collector to emitter)
Symbol
Condition
V
F
I
F
=10 mA
I
R
V
R
=5 V
C
T
V = 0, f = 1MHz
V
(BR) CEO
I
C
= 0.5mA
V
(BR) ECO
I
E
= 0.1mA
I
CEO
C
CE
V
CE
= 48V
V
CE
= 48V, Ta = 85°C
V = 0, f = 1MHz
Min. Typ. Max. Unit
1.0 1.15 1.3
V
—
—
10
µA
—
30
—
pF
80
—
—
V
7
—
—
V
—
10
100
nA
—
2
50
µA
—
10
—
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Collector
-
emitter
saturation voltage
Symbol
Condition
I
C
/ I
F
I
F
= 5mA, V
CE
= 5V
Rank GB
I
C
/ I
F (sat)
I
F
= 1mA, V
CE
= 0.4V
Rank GB
V
CE (sat)
I
C
= 2.4mA, I
F
= 8mA
I
C
= 0.2mA, I
F
= 1mA
Rank GB
MIn. Typ. Max. Unit
50
—
600
%
100
—
600
—
60
—
%
30
—
—
—
—
0.4
—
0.2
—
V
—
—
0.4
4
2002-09-25
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