TL082CPT Просмотр технического описания (PDF) - STMicroelectronics

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производитель

TL082CPT

General purpose JFET dual operational amplifiers

STMicroelectronics 

TL082 TL082A TL082B

Electrical characteristics

Table 3.

Symbol

VCC = ±15V, Tamb = +25°C (unless otherwise specified) (continued)

Parameter

TL082I,AC,AI,BC,

BI

TL082C

Unit

Min. Typ. Max. Min. Typ. Max.

tr

Kov

GBP

Ri

THD

en

∅m

Rise time

Vin = 20mV, RL = 2kΩ, CL = 100pF, unity gain

Overshoot

Vin = 20mV, RL = 2kΩ, CL = 100pF, unity gain

Gain bandwidth product

Vin = 10mV, RL = 2kΩ, CL = 100pF, F= 100kHz 2.5

Input resistance

Total harmonic distortion

F=1kHz, RL = 2kΩ,CL=100pF, Av=20dB, Vo=2Vpp

Equivalent input noise voltage

RS = 100Ω, F = 1kHz

Phase margin

0.1

10

4

1012

0.01

15

45

0.1

10

2.5 4

1012

0.01

15

45

µs

%

MHz

Ω

%

---n---V-----

Hz

degrees

Channel separation

Vo1/Vo2

Av = 100

120

120

dB

1. The input bias currents are junction leakage currents which approximately double for every 10° C increase in the junction

temperature.

5/17

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