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TISP61060DR

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS

Power Innovations Ltd 

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

electrical characteristics, -40°C ≤ TJ ≤ 85°C (unless otherwise noted) (continued)

PARAMETER

TEST CONDITIONS

MIN TYP

IGAS

IGT

dv/dt

Gate reverse current

Gate trigger current

Critical rate of rise of

off-state voltage

VGG = -85 V, K and A terminals connected

IT = -1 A, tp(g) ≥ 20 µs, VGG = -50 V

VGG = -50 V, (see Note 3)

TJ = 25°C

TJ = 85°C

-1000

CO

Anode-cathode off-

state capacitance

f = 1 MHz, Vd = 0.1 V, IG = 0, (see Note 4)

VD = 0 V

VD = -50 V

85

10

MAX

5

50

15

UNIT

µA

µA

mA

V/µs

pF

pF

NOTES: 3. Linear rate of rise, maximum voltage limited to 80% VGG.

4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are a.c. connected to the guard terminal of the bridge.

thermal characteristics

PARAMETER

RθJA Junction to free air thermal resistance

TEST CONDITIONS

Ptot = 0.8 W, TA = 25°C

5 cm2, FR4 PCB

D Package

P Package

MIN TYP MAX UNIT

170

°C/W

125

PARAMETER MEASUREMENT INFORMATION

+i

IFSP (= |ITSP|)

IFSM (= |ITSM|)

IF

VF

VGK(BO)

VGG

VD

-v

ID

I(BO)

IS

V(BO)

VS

Quadrant III

Switching

Characteristic

IH

VT

IT

ITSM

ITSP

-i

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC

Quadrant I

Forward

Conduction

Characteristic

+v

PM6XAAA

PRODUCT INFORMATION

3

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