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TCM1060DR

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS

Power Innovations Ltd 

TISP61060D, TISP61060P

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS

PROGRAMMABLE OVERVOLTAGE PROTECTORS

SEPTEMBER 1995 - REVISED SEPTEMBER 1997

These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high

reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the

loading on the SLIC supply during overvoltages caused by power cross and induction.

absolute maximum ratings

RATING

Repetitive peak off-state voltage, IG = 0, -40°C ≤ TJ ≤ 85°C

Repetitive peak gate-cathode voltage, VKA = 0, -40°C ≤ TJ ≤ 85°C

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

10/1000 µs

10/160 µs

2/10 µs

Non-repetitive peak on-state current (see Notes 1 and 2)

60 Hz sine-wave, 25 ms

60 Hz sine-wave, 2 s

Continuous on-state current (see Note 2)

Continuous forward current (see Note 2)

Operating free-air temperature range

Storage temperature range

Lead temperature 1,6 mm (1/16 inch) from case for 10 s

SYMBOL

VDRM

VGKRM

ITSP

VALUE

-100

-85

30

45

50

UNIT

V

V

A

ITSM

ITM

IFM

TA

Tstg

TL

6

1

0.3

0.3

-40 to +85

-40 to +150

260

Arms

A

A

°C

°C

°C

NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C ≤ TJ ≤ 85°C. The surge may be repeated after the device returns to

its initial conditions.

2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both

terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the

rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.

recommended operating conditions

CG Gate decoupling capacitor

MIN TYP MAX UNIT

100

nF

electrical characteristics, -40°C ≤ TJ ≤ 85°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

ID

Off-state current

V(BO) Breakover voltage

IS

Switching current

VT

On-state voltage

VF

Forward voltage

IH

Holding current

VD = -85 V, VGK = 0 V

TJ = 25°C

TJ = 85°C

dv/dt = -250 V/ms, Source Resistance = 300 Ω, VGG = -50 V

dv/dt = -250 V/ms, Source Resistance = 300 Ω, VGG = -65 V

IT = 12.5 A, 10/1000 µs, Source Resistance = 80 Ω, VGG = -50 V

dv/dt = -250 V/ms, Source Resistance = 300 Ω, VGG = -50 V

IT = 1 A

IT = 10 A

IT = 16 A

IT = 30 A

IF = 1 A

IF = 10 A

IF = 16 A

IF = 30 A

IT = -1 A, di/dt = +1A/ms, VGG = -50 V

MIN

-100

-150

TYP

MAX

5

50

-53

-68

-55

3

4

5

7

2

4

5

5

UNIT

µA

µA

V

mA

V

V

mA

PRODUCT INFORMATION

2

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