TIP29 Просмотр технического описания (PDF) - SavantIC Semiconductor
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TIP29 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
TIP29/29A/29B/29C
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP29
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP29A
TIP29B
IC=30mA; IB=0
TIP29C
VCE(sat)
VBE
ICES
ICEO
IEBO
hFE-1
hFE-2
fT
Collector-emitter saturation voltage IC=1A; IB=0.125A
Base-emitter on voltage
IC=1A ; VCE=4V
TIP29
VCE=40V; VEB=0
Collector
cut-off current
TIP29A
TIP29B
VCE=60V; VEB=0
VCE=80V; VEB=0
TIP29C
VCE=100V; VEB=0
Collector
cut-off current
TIP29/29A VCE=30V; IB=0
TIP29B/29C VCE=60V; IB=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
IC=0.2A ; VCE=4V
DC current gain
IC=1A ; VCE=4V
Transition frequency
IC=0.2A ; VCE=10V;f=1MHz
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MIN TYP. MAX UNIT
40
60
V
80
100
0.7
V
1.3
V
0.2
mA
0.3
mA
1.0
mA
40
15
75
3
MHz
VALUE
4.167
UNIT
/W
2
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