TDA1517ATW Просмотр технического описания (PDF) - NXP Semiconductors.

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TDA1517ATW

8 W BTL or 2 × 4 W SE power amplifier

NXP Semiconductors. 

NXP Semiconductors

8 W BTL or 2 × 4 W SE power amplifier

Product specification

TDA1517ATW

Notes to the characteristics

1. RL = 4 Ω, measured in Fig.4.

2. Output power is measured directly at the output pins of the IC.

3. Frequency response externally fixed.

4. Vripple = Vripple(max) = 2 V (p-p); RS = 0 Ω.

5. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.

6. Noise output voltage independent of RS.

7. Vi = Vi(max) = 1 V (RMS).

8. RL = 8 Ω, measured in Fig.3.

APPLICATION INFORMATION

handbook, full pagewidth

TDA1517ATW

3

Ri

60 kΩ

15

16

A

VCC

100

1000

nF

μF

8

+OUT

9

470 nF

+IN1

VCC

10 kΩ

Ri

60 kΩ

18

12

B

13

μc1

MICRO-

CONTROLLER

μc2

μc1 μc2

On

00

Mute 0 1

Standby 1 0

MODE 17

STANDBY/

MUTE LOGIC

8.2

kΩ

5 15 kΩ

VCC

15 kΩ

input

reference

voltage

SHORT CIRCUIT

AND

TEMPERATURE

PROTECTION

4

10 11

RL

8Ω

−OUT

SGND

PGND

MGU304

Fig.3 BTL application block diagram.

2001 Apr 17

7

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