TCS800 Просмотр технического описания (PDF) - Advanced Power Technology

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TCS800

800 Watts, 50 Volts, Pulsed Avionics 1030 MHz

Advanced Power Technology  

TCS800

800 Watts, 50 Volts, Pulsed

Avionics 1030 MHz

GENERAL DESCRIPTION

The TCS800 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1030 MHz, with the pulse

width and duty required for TCAS applications. The device has gold thin-film

metallization and diffused ballasting for proven highest MTTF. The transistor

includes input and output prematch for broadband capability. Low thermal

resistance package reduces junction temperature, extends life.

CASE OUTLINE

55SM Style 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25°C1

1944 W

Maximum Voltage and Current

Collector to Base Voltage (BVces)

Emitter to Base Voltage (BVebo)

65 V

3.5 V

Collector Current (Ic)

50 A

Maximum Temperatures

Storage Temperature

-65 to +200 °C

Operating Junction Temperature +230 °C

ELECTRICAL CHARACTERISTICS @ 25°C

SYMBOL CHARACTERISTICS

TEST CONDITIONS

Pout

Pin

Pg

ηc

RL

Pd

VSWR

Power Out

Power Input

Power Gain

Collector Efficiency

Input Return Loss

Pulse Droop

Load Mismatch Tolerance

F = 1030 MHz

VCC = 50 Volts

PW = 32 µsec

DF = 1%

F = 1030 MHz

FUNCTIONAL CHARACTERISTICS @ 25°C

BVebo*

BVces

hFE*

θjc1

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC – Current Gain

Thermal Resistance

Ie = 70 mA

Ic = 100 mA

Vce = 5V, Ic = 5A

NOTE 1: At rated output power and pulse conditions.

*: Not measurable due to internal EB returns

Rev B – Sept. 2005

MIN TYP MAX UNITS

800

W

126

W

8.0 9.0

dB

45

%

-12

dB

0.5

dB

4:1

3.5

V

65

V

20

0.09 °C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information

contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.

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