TC3967 Просмотр технического описания (PDF) - Unspecified
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TC3967 Datasheet PDF : 1 Pages
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TC3967
REV.1_04/27/2005
2W Packaged Self-Bias PHEMT GaAs Power FETs
FEATURES
• 2W Typical Output Power
• 12.5dB Typical Linear Power Gain at 2.45GHz
• High Linearity:
IP3 = 43 dBm Typical
• High Power Added Efficiency:
Nominal PAE of 35%
• Breakdown Voltage: BVDGO ≥ 15V
• Wg = 5 mm
• 100 % DC Tested
• Suitable for High Reliability Application
• Lost Cost Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3967 is a self-bias Cu-based ceramic packaged device with TC1601N PHEMT GaAs FETs, which is
designed to provide the single power supply application. The Cu-based ceramic package provides excellent
thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and
ground the source, which is suitable for oscillator, power amplifier application in a wide range of
commercial application. All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)
Symbol
P1dB
GL
IP3
PAE
CONDITIONS
Output Power at 1dB Gain Compression Point
VDS = 8 V
Linear Power Gain
VDS = 8 V
Intercept Point of the 3rd-order Intermodulation
VDS = 8 V, *PSCL = 20 dBm
Power Added Efficiency at 1dB Compression Power
IDS
BVDGO
Rth
Drain-Source Current at VDS = 8 V
Drain-Gate Breakdown Voltage at IDGO = 1.2mA
Thermal Resistance
Note: *PSCL: Output Power of Single Carrier Level.
MIN
32
15
TYP
MAX
UNIT
33
dBm
12.5
dB
43
dBm
35
%
600
mA
18
Volts
8
°C/W
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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