TAN75A Просмотр технического описания (PDF) - Microsemi Corporation
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TAN75A Datasheet PDF : 4 Pages
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TAN75A
75 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The TAN75A is a high powered COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The device
has gold thin-film metallization and diffused ballasting for proven highest
MTTF. The transistor includes input and output prematch for broadband
capability. Low thermal resistance package reduces junction temperature,
extends life.
CASE OUTLINE
55AZ, Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C
290 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
Emitter to Base Voltage (BVebo)
Collector Current (Ic)
55 V
4.0 V
9.0 A
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 50 Volts
PW = 20 μsec
DF = 5%
F = 1090 MHz
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
BVces
hFE
θjc2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 10 mA
Ic = 15 mA
Vce = 5V, Ic = 15 mA
MIN
75
8.0
TYP
80
8.5
40
MAX
12
20:1
UNITS
W
W
dB
%
4
V
50
V
10
100
0.6 °C/W
NOTE 1: At rated output power and pulse conditions
2. At rated pulse conditions
.
Revision A, August 2010
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our website at www.microsemi.com or contact our factory direct
Microsemi Corporation 3000 Oakmead Village Drive, Santa Clara, California 95051 408-986-8031
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