T14L256A(2001) Просмотр технического описания (PDF) - Taiwan Memory Technology
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T14L256A Datasheet PDF : 9 Pages
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tm TE
CH
T14L256A
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage to Vss Potential
Inputs to Vss Potential
Power Dissipation
Storage Temperature
RATING
-0.5 to + 4.6
-0.5 to Vcc +0.5
1.0
-60 to +150
UNIT
V
V
W
°C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage
Input Voltage, low
Input Voltage, high
Ambient Temperature
SYM
MIN
TYP
Vcc
Typ-5%
3.3
VIL
-0.3
-
VIH
2.1
-
TA
0
-
MAX
Typ+5%
0.8
Vcc+0.3
70
UNIT
V
V
V
°C
TRUTH TABLE
CS
OE
WE
H
X
X
L
H
H
L
L
H
L
X
L
MODE
Not Selected
Output Disable
Read
Write
I/O1- I/O8
High-Z
High-Z
Data Out
Data In
Vcc
ISB, I SB1
Icc
Icc
Icc
OPERATING CHARACTERISTICS
(Vcc = 3.3V ± 5%, Vss = 0V, Ta = 0 to 70°C)
PARAMETER
Input Leakage Current
SYM.
TEST CONDITIONS
ILI Vin=Vss to Vcc
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
ILO
VOL
VOH
Icc
VI/O=Vss to Vcc , CS =VIH or
OE = VIH or WE = VIL
IOL= + 8.0mA
IOH= - 4.0mA
CS =VIL, I/O=0mA
8
Cycle = MIN.
10
Duty = 100%
12
Standby Power
Supply Current
15
ISB CS=VIH, Cycle=MIN, Duty=100%
ISB1 CS ≥ Vcc-0.2V
Note: Typical characteristics are at Vcc = 3.3V, Ta = 25°C
MIN.
-10
-10
-
2.4
-
-
-
-
-
-
TYP. MAX. UNIT
- +10 uA
- +10 uA
- 0.4 V
-
-
V
- 110 mA
- 100 mA
-
90 mA
-
80 mA
- 15 mA
-
2 mA
Taiwan Memory Technology, Inc. reserves the right P. 2
to change products or specifications without notice.
Publication Date: APR. 2001
Revision: E
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