CGY2014TT Просмотр технического описания (PDF) - Philips Electronics
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CGY2014TT Datasheet PDF : 16 Pages
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Philips Semiconductors
GSM/DCS/PCS power amplifier
Preliminary specification
CGY2014TT
Performance characteristics in GSM band
handbook,3h7alfpage
Po
(dBm)
35
(3)
efficiency
(2)
(1)
(3)
(2)
(1)
output power
FCA171
60
η
(%)
40
33
20
handbook,4h0alfpage
Po
(dBm)
30
20
10
FCA176
(1)
(2)
(3)
31
0
800
850
900
950
1000
fRF (MHz)
VDD1(LB) = 3 V.
VDD2(LB) = VDD3(LB) = 3.5 V.
Pi(LB) = 0 dBm.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −20 °C.
Fig.3 Output power and efficiency as a function of
the frequency.
0
0
1
fRF(LB) = 900 MHz.
Pi(LB) = 0 dBm.
VDD1(LB) = 3 V.
VDD = VDD2(LB) = VDD3(LB).
2
3 VDD (V) 4
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −20 °C.
Fig.4 Output power as a function of the supply
voltage.
Performance characteristics in DCS band
handboo3k5, .h5alfpage
Po
(dBm)
34.5
efficiency
(3)
(2)
(1)
FCA172
55
η
(%)
45
33.5
32.5
35
(3)
(2)
25
output power (1)
31.5
1650
1700
1750
15
1800
1850
fRF (MHz)
VDD1(HB) = 3 V.
VDD2(HB) = VDD3(HB) = 3.5 V.
Pi(HB) = 3 dBm.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −20 °C.
Fig.5 Output power and efficiency as a function of
the frequency.
handbook,4h0alfpage
Po
(dBm)
30
FCA173
20
(1)
(2)
(3)
10
0
0
1
fRF(HB) = 1750 MHz.
Pi(HB) = 3 dBm.
VDD1(HB) = 3 V.
VDD = VDD2(HB) = VDD3(HB).
2
3
4
VDD (V)
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −20 °C.
Fig.6 Output power as a function of the supply
voltage.
2000 Apr 11
7
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