CGY2013G/C1 Просмотр технического описания (PDF) - Philips Electronics

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производитель

CGY2013G/C1

GSM 4 W power amplifier

Philips Electronics 

Philips Semiconductors

GSM 4 W power amplifier

Preliminary specification

CGY2013G

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.

SYMBOL

VDD

VGG

Tj(max)

Tstg

Ptot

PARAMETER

positive supply voltage

negative supply voltage

maximum operating junction temperature

IC storage temperature

total power dissipation

MIN.

−

−

−

−

−

MAX.

7

−10

150

150

1.5

UNIT

V

V

°C

°C

W

THERMAL CHARACTERISTICS

General operating conditions applied.

SYMBOL

Rth j-c

PARAMETER

thermal resistance from junction to case; note 1

Note

1. This thermal resistance is measured under GSM pulse conditions.

VALUE

25

UNIT

K/W

DC CHARACTERISTICS

VDD = 3.6 V; Tamb = 25 °C; general operating conditions applied; peak current values during burst; unless otherwise

specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

Pins RFO/VDD4, VDD3, VDD2, VDD1 and DETO/VDD5

VDD

positive supply voltage

IDD

positive peak supply current

Pins VGG1 and VGG2

VGG1

VGG2

IGG1 + IGG2

negative supply voltage

negative supply voltage

negative peak supply current

note 1

note 1

0

3.6 5.5 V

−

2.4 3.0 A

−

−1.8 −

V

−

−1.8 −

V

−

2.5 5

mA

Note

1. The negative bias VGG1 and VGG2 must be applied 10 µs before the power amplifier is switched on, and must remain

applied until the power amplifier has been switched off.

1998 Jan 23

5

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