SPU02N60C3 Просмотр технического описания (PDF) - Infineon Technologies
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SPU02N60C3 Datasheet PDF : 12 Pages
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Final data
SPD02N60C3
SPU02N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 1.8 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJA
RthJA
Tsold
Values
Unit
min. typ. max.
-
-
5 K/W
-
-
75
-
-
75
-
-
50
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600
-
-
Drain-Source avalanche
V(BR)DS VGS=0V, ID=0.25A
-
700 -
breakdown voltage
Gate threshold voltage
VGS(th) ID=80µΑ, VGS=VDS 2.1
3
3.9
Zero gate voltage drain current IDSS
VDS=600V, VGS=0V,
Tj=25°C,
-
0.5
1
Tj=150°C
-
-
50
Gate-source leakage current
IGSS
VGS=30V, VDS=0V
-
- 100
Drain-source on-state resistance RDS(on) VGS=10V, ID=1.1A,
Tj=25°C
-
2.7
3
Tj=150°C
-
7.3
-
Gate input resistance
RG
f=1MHz, open Drain
-
9
-
Unit
V
µA
nA
Ω
Page 2
2003-10-02
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