SNA-576-TR3 Просмотр технического описания (PDF) - Stanford Microdevices
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SNA-576-TR3 Datasheet PDF : 3 Pages
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Absolute Maximum Ratings
Param eter
D evic e Current
Pow er D is sipation
RF Input Power
Ju n ctio n Tem p era tu re
O p e ratin g Te m p e ra tu re
Sto ra g e Te m p e ra ture
A b s o lu te
M axim um
100m A
560m W
200m W
+200C
-45C to +85C
-65C to +150C
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
MTTF vs. Temperature @ Id = 70mA
Junction
Lead Temperature
MTTF (hrs)
Temperature
+45C
+155C
1000000
+80C
+190C
100000
+110C
+220C
10000
Thermal Resistance (Lead-Junction): 315° C/W
SNA-576 DC-3 GHz Cascadable MMIC Amplifier
Part Number Ordering Information
Part Number Devices Per Reel
SNA-576-TR1
1000
SNA-576-TR2
3000
SNA-576-TR3
5000
Reel Size
7"
13"
13"
Recommended Bias Resistor Values
Supply
5V 7.5V 9V 12V 15V 20V
Voltage(Vs)
Rbias (Ohms) *
36
57 100 143 214
* Needs active biasing for constant current source
6.0
5.0
Typical Biasing Configuration
Pin Designation
1
RF in
2
GND
RF out
3
and Bias
4
GND
Typical Performance at 25° C
Power Gain vs. Device Current
21
20
19
18
17
dB 16
15
14
13
12
80mA
40mA
70mA
60mA
50mA
0
1
2
3
4
5
GHz
Device Voltage vs. Current - Id
6
5.5
Vdc 5
4.5
4
65
70
75
80
85
90
95
mA
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
5-75
http://www.stanfordmicro.com
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